View 2729-170_376028.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

2729-170R4
2729-170
170 Watts, 38 Volts, 100s, 10% Radar 2700-2900 MHz
GENERAL DESCRIPTION
The 2729-170 is an internally matched, COMMON BASE bipolar transistor capable of providing 170 Watts of pulsed RF output power at 100s pulse width, 10% duty factor across the 2700 to 2900 MHz band. The transistor prematch and test fixture has been optimized through the use of Pulsed Automated Load Pull. This hermetically solder-sealed transistor is specifically designed for S-band radar applications. It utilizes gold metallization and emitter ballasting to provide high reliability and supreme ruggedness.
CASE OUTLINE 55KS-1 Common Base
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation 570 W Device Dissipation @ 25C1 Maximum Voltage and Current Collector to Base Voltage (BVces) 65 Emitter to Base Voltage (BVebo) 3.0 Collector Current (Ic) 17 A Maximum Temperatures Storage Temperature -65 to +200 Operating Junction Temperature +200
V V
C C
ELECTRICAL CHARACTERISTICS @ 25C SYMBOL Pout Pin Pg c VSWR CHARACTERISTICS Power Output Power Input Power Gain Collector Efficiency Load Mismatch Tolerance1 TEST CONDITIONS F=2700-2900 MHz Vcc = 38 Volts Pulse Width = 100 s Duty Factor = 10% F = 2900 MHz, Po = 170 W MIN 170 25.7 8.2 52 8.6 60 2:1 TYP MAX UNITS W W dB %
FUNCTIONAL CHARACTERISTICS @ 25C BVebo Iebo BVces Ices hFE jc1
NOTE:
Emitter to Base Breakdown Emitter to Base Leakage Collector to Emitter Breakdown Collector to Emitter Leakage DC - Current Gain Thermal Resistance
1. At rated output power and pulse conditions
Ie = 30 mA Veb = 1.5 V Ic = 120 mA Vce = 36 V Vce = 5V, Ic = 600 mA
3.0 2 56 18 65 7 50 0.30
V mA V mA C/W
Issue April 2005
MICROSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR CONTACT OUR FACTORY DIRECTLY.
2729-170R4
2729-170
Vcc = 38 Volts, Pulse Width = 100s, Duty = 10 %
G2754-2,
Product is in characterization, additional curves will be inserted at the conclusion.
Pout vs. Pin
Efficiency vs Power Out
70.0 60.0 50.0 6
Efficiency (%)
Power Gain vs Power Out
9 8 7
200.0 180.0 160.0 140.0 Pout (W) 120.0 100.0 80.0 60.0 40.0
2.7GHz 2.8GHz 2.9GHz
40.0 30.0 20.0 10.0
2.7GHz 2.8GHz 2.9GHz
Gain (dB)
5 4 3 2 1 0
2.7GHz 2.8GHz 2.9GHz
20.0 0.0 0.0 10.0 Pin (W) 20.0 30.0
0.0 0.0 50.0 100.0 150.0 200.0
Power Output (W)
0.0
50.0
100.0 Pout (W)
150.0
200.0
Input and Load Impedance
Input Impedance vs Frequency 15
Load Impedance vs Frequency 4 Zload = Rl + jXl 2 0 -2 -4 -6 Frequency - GHz 2.7 2.75 2.8 2.85 2.9 Rl jXl
Zin = Rin + jXin
10 5 0 2.7 -5 Frequency - GHz 2.75 2.8 2.85 2.9 Rin jXin
Note: Z in is looking into the transistor input, Z Load is looking into the Output Circuit.
MICROSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR CONTACT OUR FACTORY DIRECTLY.
2729-170R4
2729-170 Broadband Test Circuit -
Destination F1 F2 F3 F4 D1 D2 D3 D4 D5 D6 D7 D8 D9 D10
W (Mil) 51 51 51 51 51 250 51 314 96 827 965 51 166 51
L (Mil) 115 395 630 50 424 107 284 410 91 177 295 110 125 100
Destination D11 D12 D13
W (Mil) 274 51 51 Duroid 6002, 20Mil, 1Oz Cu List of component Destination Value C1 10pF C2 1000pF C3 10000pF C4 10000pF C5 10000pF C6 2200uF C7 47uF R 2.5 ohms (may needed)
L (Mil) 160 336 324
Size A B B B B Electrolytic Electrolytic Fix
2729-170
MICROSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR CONTACT OUR FACTORY DIRECTLY.
2729-170R4
MICROSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR CONTACT OUR FACTORY DIRECTLY.

▲Up To Search▲

Price & Availability of 2729-170

	To Download 2729-170 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .